Yangtze Memory announced on Monday that its 128-layer QLC 3D NAND flash memory (model number: X2-6070) has been successfully developed and has been verified on terminal storage products such as SSDs of multiple controller manufacturers.
As the industry's first 128-layer QLC 3D NAND flash memory, model X2-6070 has the highest storage density per unit area, the highest I / O transfer speed and the highest single NAND flash memory chip capacity among the known models in the industry.
Yangtze Memory X2-6070 has 1.6Gb/s high-speed read and write performance and 1.33Tb high capacity, which proves the forward-looking and maturity of Xtacking architecture.
QLC is a new technical form of 3D NAND after TLC (3 bit/cell). It has the characteristics of large capacity and high density and is suitable for read-intensive applications.
Each X2-6070 QLC flash memory chip has a 128-layer three-dimensional stack, with a total of more than 366.5 billion effective charge-trap (Charge-Trap) memory cells.
Each storage unit can store 4 words of data, providing a total storage capacity of 1.33Tb.
If the 0 or 1 of the recorded data is likened to "human beings" in the digital world, a Yangtze Memory 128-layer QLC chip is equivalent to providing 366.5 billion rooms, each room containing 4 "people", which can accommodate a total of about 1.466 billion "people".ย Living is 5.33 times the capacity of the previous generation 64-layer single chip.
Yangtze Memory also released a 128-layer 512Gb TLC (3 bit/cell) flash memory chip (model: X2-9060) to meet the needs of different application scenarios.
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