On April 13, Yangtze Memory announced on its website that its 128-layer QLC 3D NAND flash memory chip X2-6070 was successfully developed and has been verified on terminal storage products such as SSDs of multiple controller manufacturers.
This marks a tremendous improvement in key technologies by Chinese manufacturers and has attracted widespread attention in China.
From the development roadmap of top chip companies such as Samsung and Hynix, they are all mass-producing 128-layer flash memory chips in 2020.
In 2019, Yangtze River Storage was still producing 32-layer NAND flash memory chips, which Samsung was using back in 2015.
However, in 2020, Yangtze River Storage will skip 96-layer and directly develop 128-layer NAND flash memory chips.
Commentators believe that this is a milestone breakthrough. In the process of catching up with its international counterparts in almost all areas of China's chip industry, Yangtze Memory has achieved parity for the first time.
