A Chinese team recently published a research paper in the Nano Letters describing a new type of 5 nm ultra-high precision laser lithography processing method.
The research was conducted by Zhang Ziyang, a researcher at the Suzhou Institute of Nanotechnology and Nanobionics, Chinese Academy of Sciences, in collaboration with Liu Qian, a researcher at the National Nano Center.
The team has designed and developed a new three-layer stacked thin film structure. For the inorganic titanium film photoresist, they employed a dual laser beam cross-stacking technique. By precisely controlling the energy density and step size, they achieved a breakthrough of the 1/55 diffraction limit, reaching a minimum characteristic line width of 5 nm.
The research team used this super-resolution laser direct writing technique to achieve large-scale fabrication of nano-slit electrode array structures.
It is worth mentioning that the research team has developed a fully intellectualized laser direct-writing device that exploits the nonlinearity of laser and material It is different from the traditional technology path of shortening the laser wavelength or increasing the numerical aperture.
This breaks the restriction that the receptor material is organic photoresist in the traditional laser direct writing technique. It can use a variety of receptor materials, greatly expanding the application of laser direct writing scenarios.
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