ChangXin Memory Technologies recently signed a patent licensing agreement with US semiconductor company Rambus Inc., the company said today.
Under this agreement, ChangXin Memory has licensed a number of patents from Rambus to implement dynamic random-access storage technology.
ChangXin Memory Chairman and CEO Zhu Yiming said:
The agreement with Rambus once again demonstrates that ChangXin Memory takes international rules related to intellectual property highly seriously and continues to strengthen its intellectual property portfolio,
The company is committed to increasing its accumulation of core semiconductor technologies and high-value intellectual property through independent research and development and international cooperation and using this as a basis to achieve sustainable development and steadily improve market competitiveness.
By mutual agreement, other details in this agreement are not disclosed.
On December 5 last year, ChangXin Memory entered into a patent licensing agreement and patent purchase agreement with Polaris Innovations Limited, a wholly-owned subsidiary of WiLAN.
ChangXin Memory has licensed numerous DRAM technology patents from Polaris under a patent license agreement.
The patents come from a portfolio of patents that Polaris acquired from Qimonda parent Infineon in June 2015.
