Samsung Electronics today announced that it has started mass production of eUFS 3.1 flash memory with a 512GB package capacity, which can be used in mobile phones and tablets.
Compared with the previous generation eUFS 3.0 (512GB) flash memory products, the new write speed has increased by 200% to 1200MB/s.
Compared with the traditional SATA3 SSD (540MB/s) and UHS-I microSD memory card (90MB/s) for PC, it can be described as a huge upgrade, which can eliminate the storage bottleneck in the era of 8K and 5G.
Its continuous read speed can reach 2100MB/s, random read speed is 100K IOPS, and random write speed is 70K IOPS.
This new batch of eUFS 3.1 flash memory is available in 128GB and 256GB capacities.
Samsung also revealed that its X2 line in Xi'an, China has begun production of fifth-generation V-NAND (9x layer) this month, and the P1 line in Pyeongtaek, Korea will soon switch to the sixth-generation V-NAND flash memory (1xx Layer) chip production to meet growing market demand.
Earlier, Western Digital and Armor (formerly Toshiba Storage) also introduced UFS 3.1 flash memory products, but they were all sampled and did not reach mass production.
