Yangtze Memory's 128-layer QLC flash memory debuts with highest I/O speed
After announcing the successful development of 128-layer QLC 3D flash memory on April 13 this year, Yangtze Memory Technologies, China’s top memory chipmaker under the umbrella of Tsinghua Unigroup, publicly demonstrated its 128-layer QLC 3D NAND flash memory chip at the China Electronic Information Expo held today.
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