Yangtze Memory's 128-layer QLC flash memory debuts with highest I/O speed

After announcing the successful development of 128-layer QLC 3D flash memory on April 13 this year, Yangtze Memory Technologies, China’s top memory chipmaker under the umbrella of Tsinghua Unigroup, publicly demonstrated its 128-layer QLC 3D NAND flash memory chip at the China Electronic Information Expo held today.